2TB SAMSUNG 870 QVO SATA3 - 6Gb/s

Specifications

Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Sequential Read Up to 560 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Up to 530 MB/s Sequential Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Storage Memory Samsung V-NAND 4bit MLC
Form Factor 2.5 inch

Application Client PCs
Capacity 2,000 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor 2.5 inch
Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension (WxHxD) 100 X 69.85 X 6.8 (mm)
Weight Apporx. 46.0g Weight
Storage Memory Samsung V-NAND 4bit MLC
Controller Samsung MKX Controller
Cache Memory Samsung 2 GB Low Power DDR4 SDRAM

TRIM Support TRIM Supported
S.M.A.R.T Support S.M.A.R.T Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0),TCG/Opal, IEEE1667 (Encrypted drive)
WWN Support World Wide Name supported
Device Sleep Mode Support Yes

Sequential Read Up to 560 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Up to 530 MB/s Sequential Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Read (4 KB, QD32) Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Write (4KB, QD32) Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Read (4 KB, QD1) Up to 11,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated
Random Write (4 KB, QD1) Up to 35,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

Average Power Consumption (system level) Average: 3.0 W *Maximum: 5.0 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle) Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 5V ± 5% Allowable voltage
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 - 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)